Modern electronics use a wide range of semiconductor materials. Cutting edge devices, such as transistors, solar cells and light emitting diodes, push materials properties to their limits, and require extremely homogeneous source materials. Raman spectroscopy is an ideal tool for studying semiconductors.
You can use Raman to characterise and generate images of all semiconductors (e.g. Si, carbon-based, III-V's, and polymers) and superconductors. A wide range of information can be revealed, including:
- chemical composition (e.g. alloy fractions of compound semiconductors)
- polytypes (e.g. 4H-SiC and 6H-SicC)
- dopant concentrations
- thin film thickness
- crystal structure type and orientation
- crystal quality
- uniformity and purity
- device temperature
Raman analysis is simple because it requires no sample preparation. It does not require vacuum technology, or suffer from charging effects experienced with electron microscopy.
Renishaw can configure your Raman system to suit all users, from research scientists to technicians.
Large area analysis
Renishaw Raman systems can analyse very large samples. For example, you can generate images of entire wafers to discover contaminants or residual stresses.
Renishaw's Raman systems also enable you to collect and analyse photoluminescence (PL) spectra. You can collect both vibrational and electronic information with one instrument.
Add Renishaw's Raman systems to your production line to conduct online analysis for quality control purposes. Diagnose problems early, reduce waste and improve yield.
Renishaw's Raman systems produce highly repeatable data that accurately represents the sample. In-built automated calibration and health checking ensure data can be accurately compared, no matter when collected.
Watch a movie
3D Raman chemical image showing an indentation made on a silicon wafer by a diamond Vickers indenter.
Renishaw’s LiveTrack™ focus-tracking technology makes it easy to study samples with uneven, curved, or rough surfaces. This 3D Raman image of an indented silicon wafer reveals stresses around the indent (compressive regions white/yellow, tensile regions black/dark red). The blue-green region within the indent is silicon that has been very highly plastically deformed, with a highly amorphous structure.
Download an application note
Application note: Analyse silicon carbide (SiC) with the inVia Raman microscope (pdf)
The properties of silicon carbide are highly dependent on its crystal structure (it can exist in many polytypes), on the quality of the crystal, and on the number and types of defects present. Manufacturers of silicon carbide raw material and devices need to monitor and control these attributes to enhance yield. The first step in controlling these parameters is to measure them repeatably and quantifiably. Renishaw’s Raman systems are ideal for this.
Find out more
The California Institute of Technology (Caltech) is on a mission to find new and effective ways to produce solar fuels using only sunlight, water and carbon dioxide. A focus of this is investigating photocatalysis and light capture.
Renishaw, the global engineering technologies company, is delighted to announce that it has received a CS Industry Award 2016, in the Metrology category, for its inVia Raman microscope. The CS Industry Awards are organised by Compound Semiconductor magazine and voted for through the website www.compoundsemiconductor.net Together these deliver comprehensive coverage of the compound semiconductor industry.
Kwansei Gakuin University uses Raman microscopy to study crystallographic defects in silicon carbide wafers
Kwansei Gakuin University in Hyogo, Japan, uses Raman microscopy to study crystallographic defects in silicon carbide wafers.
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